Images are for reference only.
See Product Specifications for product details.
| Part Number | SI8810EDB-T2-E1 |
|---|---|
| Part Status | Active |
| FET Type | N-Channel |
| Technology | MOSFET (Metal Oxide) |
| Drain to Source Voltage (Vdss) | 20V |
| Current - Continuous Drain (Id) @ 25°C | - |
| Drive Voltage (Max Rds On,Min Rds On) | 1.5V, 4.5V |
| Vgs(th) (Max) @ Id | 900mV @ 250µA |
| Gate Charge (Qg) (Max) @ Vgs | 8nC @ 8V |
| Input Capacitance (Ciss) (Max) @ Vds | 245pF @ 10V |
| Vgs (Max) | ±8V |
| FET Feature | - |
| Power Dissipation (Max) | 500mW (Ta) |
| Rds On (Max) @ Id, Vgs | 72 mOhm @ 1A, 4.5V |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Mounting Type | Surface Mount |
| Supplier Device Package | 4-Microfoot |
| Package / Case | 4-XFBGA |
| Image | Part Number | Manufacturers | Description | In Stock | View | |
|---|---|---|---|---|---|---|
 |
SI8810EDB-T2-E1 | Vishay Siliconix | MOSFET N-CH 20V 2.1A MICROFOOT | - | 0 | Details |
 |
SI8812DB-T2-E1 | Vishay Siliconix | MOSFET N-CH 20V MICROFOOT | - | 3000 | Details |
 |
SI8816EDB-T2-E1 | Vishay Siliconix | MOSFET N-CH 30V MICRO FOOT | - | 0 | Details |
 |
SI8817DB-T2-E1 | Vishay Siliconix | MOSFET P-CH 20V MICROFOOT | - | 0 | Details |
 |
SI8819EDB-T2-E1 | Vishay Siliconix | MOSFET P-CH 12V 2.9A 4-MICROFOOT | - | 510346 | Details |