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See Product Specifications for product details.
| Part Number | PSMN165-200K,518 |
|---|---|
| Part Status | Active |
| FET Type | N-Channel |
| Technology | MOSFET (Metal Oxide) |
| Drain to Source Voltage (Vdss) | 200V |
| Current - Continuous Drain (Id) @ 25°C | 2.9A (Tc) |
| Drive Voltage (Max Rds On,Min Rds On) | 10V |
| Vgs(th) (Max) @ Id | 4V @ 1mA |
| Gate Charge (Qg) (Max) @ Vgs | 40nC @ 10V |
| Input Capacitance (Ciss) (Max) @ Vds | 1330pF @ 25V |
| Vgs (Max) | ±20V |
| FET Feature | - |
| Power Dissipation (Max) | 3.5W (Tc) |
| Rds On (Max) @ Id, Vgs | 165 mOhm @ 2.5A, 10V |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Mounting Type | Surface Mount |
| Supplier Device Package | 8-SO |
| Package / Case | 8-SOIC (0.154", 3.90mm Width) |
| Image | Part Number | Manufacturers | Description | In Stock | View | |
|---|---|---|---|---|---|---|
 |
PSMN165-200K,518 | Nexperia USA Inc. | MOSFET N-CH 200V 2.9A SOT96-1 | 0 | Details |