Images are for reference only.
See Product Specifications for product details.
| Part Number | IPB025N10N3GE8187ATMA1 |
|---|---|
| Part Status | Not For New Designs |
| FET Type | N-Channel |
| Technology | MOSFET (Metal Oxide) |
| Drain to Source Voltage (Vdss) | 100V |
| Current - Continuous Drain (Id) @ 25°C | 180A |
| Drive Voltage (Max Rds On, Min Rds On) | 6V, 10V |
| Rds On (Max) @ Id, Vgs | 2.5 mOhm @ 100A, 10V |
| Vgs(th) (Max) @ Id | 3.5V @ 275µA |
| Gate Charge (Qg) (Max) @ Vgs | 206nC @ 10V |
| Vgs (Max) | ±20V |
| Input Capacitance (Ciss) (Max) @ Vds | 14800pF @ 50V |
| FET Feature | - |
| Power Dissipation (Max) | 300W (Tc) |
| Operating Temperature | -55°C ~ 175°C (TJ) |
| Mounting Type | Surface Mount |
| Supplier Device Package | PG-TO263-7 |
| Package / Case | TO-263-7, D²Pak (6 Leads + Tab) |
| Image | Part Number | Manufacturers | Description | In Stock | View | |
|---|---|---|---|---|---|---|
 |
IPB025N10N3 G | Infineon Technologies | MOSFET N-CH 100V 180A TO263-7 | - | 0 | Details |
 |
IPB025N10N3GATMA1 | Infineon Technologies | MOSFET N-CH 100V 180A TO263-7 | - | 17580 | Details |
 |
IPB025N10N3GE8187ATMA1 | Infineon Technologies | MOSFET N-CH 100V 180A TO263-7 | - | 20173 | Details |