BSC882N03LSGATMA1

MOSFET N-CH TDSON-8
BSC882N03LSGATMA1 P1
BSC882N03LSGATMA1 P1
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Infineon Technologies ~ BSC882N03LSGATMA1

Part Number
BSC882N03LSGATMA1
Manufacturer
Infineon Technologies
Description
MOSFET N-CH TDSON-8
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Data sheet
- BSC882N03LSGATMA1 PDF online browsing
Family
Transistors - FETs, MOSFETs - Single
  • In Stock : 5000 pcs
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Product Parameter

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Part Number BSC882N03LSGATMA1
Part Status Active
FET Type N-Channel
Technology MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 34V
Current - Continuous Drain (Id) @ 25°C 100A
Drive Voltage (Max Rds On,Min Rds On) 10V
Vgs(th) (Max) @ Id 2.2V @ 250µA
Gate Charge (Qg) (Max) @ Vgs 46nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds 3700pF @ 15V
Vgs (Max) ±20V
FET Feature -
Power Dissipation (Max) 69W (Tc)
Rds On (Max) @ Id, Vgs 4.2 mOhm @ 30A, 10V
Operating Temperature -55°C ~ 150°C (TJ)
Mounting Type Surface Mount
Supplier Device Package -
Package / Case -

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