FQP10N60C

MOSFET N-CH 600V 9.5A TO-220
FQP10N60C P1
FQP10N60C P1
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Fairchild/ON Semiconductor ~ FQP10N60C

Part Number
FQP10N60C
Manufacturer
Fairchild/ON Semiconductor
Description
MOSFET N-CH 600V 9.5A TO-220
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Data sheet
FQP10N60C.pdf FQP10N60C PDF online browsing
Family
Transistors - FETs, MOSFETs - Single
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Product Parameter

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Part Number FQP10N60C
Part Status Obsolete
FET Type N-Channel
Technology MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 600V
Current - Continuous Drain (Id) @ 25°C 9.5A (Tc)
Drive Voltage (Max Rds On,Min Rds On) 10V
Vgs(th) (Max) @ Id 4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs 57nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds 2040pF @ 25V
Vgs (Max) ±30V
FET Feature -
Power Dissipation (Max) 156W (Tc)
Rds On (Max) @ Id, Vgs 730 mOhm @ 4.75A, 10V
Operating Temperature -55°C ~ 150°C (TJ)
Mounting Type Through Hole
Supplier Device Package TO-220-3
Package / Case TO-220-3

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