SI8483DB-T2-E1

MOSFET P-CH 12V 16A MICROFOOT
SI8483DB-T2-E1 P1
SI8483DB-T2-E1 P1
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Vishay Siliconix ~ SI8483DB-T2-E1

Part Number
SI8483DB-T2-E1
Manufacturer
Vishay Siliconix
Description
MOSFET P-CH 12V 16A MICROFOOT
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Data sheet
- SI8483DB-T2-E1 PDF online browsing
Family
Transistors - FETs, MOSFETs - Single
  • In Stock : 9000 pcs
  • Reference Price : submit a request

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Product Parameter

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Part Number SI8483DB-T2-E1
Part Status Active
FET Type P-Channel
Technology MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 12V
Current - Continuous Drain (Id) @ 25°C 16A (Tc)
Drive Voltage (Max Rds On,Min Rds On) 1.5V, 4.5V
Vgs(th) (Max) @ Id 800mV @ 250µA
Gate Charge (Qg) (Max) @ Vgs 65nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds 1840pF @ 6V
Vgs (Max) ±10V
FET Feature -
Power Dissipation (Max) 2.77W (Ta), 13W (Tc)
Rds On (Max) @ Id, Vgs 26 mOhm @ 1.5A, 4.5V
Operating Temperature -55°C ~ 150°C (TJ)
Mounting Type Surface Mount
Supplier Device Package 6-Micro Foot™
Package / Case 6-UFBGA

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