SI7113ADN-T1-GE3

MOSFET P-CH 100V 10.8A 1212-8
SI7113ADN-T1-GE3 P1
SI7113ADN-T1-GE3 P1
Images are for reference only.
See Product Specifications for product details.

Vishay Siliconix ~ SI7113ADN-T1-GE3

Part Number
SI7113ADN-T1-GE3
Manufacturer
Vishay Siliconix
Description
MOSFET P-CH 100V 10.8A 1212-8
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Data sheet
- SI7113ADN-T1-GE3 PDF online browsing
Family
Transistors - FETs, MOSFETs - Single
  • In Stock : 252511 pcs
  • Reference Price : submit a request

Submit a Request For Quotation on quantities greater than those displayed.

Product Parameter

All Products

Part Number SI7113ADN-T1-GE3
Part Status Active
FET Type P-Channel
Technology MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 100V
Current - Continuous Drain (Id) @ 25°C 10.8A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 4.5V, 10V
Rds On (Max) @ Id, Vgs 132 mOhm @ 3.8A, 10V
Vgs(th) (Max) @ Id 2.6V @ 250µA
Gate Charge (Qg) (Max) @ Vgs 16.5nC @ 10V
Vgs (Max) ±20V
Input Capacitance (Ciss) (Max) @ Vds 515pF @ 50V
FET Feature -
Power Dissipation (Max) 27.8W (Tc)
Operating Temperature -55°C ~ 150°C (TJ)
Mounting Type Surface Mount
Supplier Device Package PowerPAK® 1212-8
Package / Case PowerPAK® 1212-8

Related Products

All Products