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See Product Specifications for product details.
| Part Number | SI5443DC-T1-GE3 |
|---|---|
| Part Status | Active |
| FET Type | P-Channel |
| Technology | MOSFET (Metal Oxide) |
| Drain to Source Voltage (Vdss) | 20V |
| Current - Continuous Drain (Id) @ 25°C | 3.6A (Ta) |
| Drive Voltage (Max Rds On,Min Rds On) | 2.5V, 4.5V |
| Vgs(th) (Max) @ Id | 600mV @ 250µA (Min) |
| Gate Charge (Qg) (Max) @ Vgs | 14nC @ 4.5V |
| Input Capacitance (Ciss) (Max) @ Vds | - |
| Vgs (Max) | ±12V |
| FET Feature | - |
| Power Dissipation (Max) | 1.3W (Ta) |
| Rds On (Max) @ Id, Vgs | 65 mOhm @ 3.6A, 4.5V |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Mounting Type | Surface Mount |
| Supplier Device Package | 1206-8 ChipFET™ |
| Package / Case | 8-SMD, Flat Lead |
| Image | Part Number | Manufacturers | Description | In Stock | View | |
|---|---|---|---|---|---|---|
 |
SI5440DC-T1-GE3 | Vishay Siliconix | MOSFET N-CH 30V 6A 1206-8 | - | 0 | Details |
 |
SI5441BDC-T1-E3 | Vishay Siliconix | MOSFET P-CH 20V 4.4A 1206-8 | - | 0 | Details |
 |
SI5441BDC-T1-GE3 | Vishay Siliconix | MOSFET P-CH 20V 4.4A 1206-8 | - | 0 | Details |
 |
SI5441DC-T1-E3 | Vishay Siliconix | MOSFET P-CH 20V 3.9A 1206-8 | - | 0 | Details |
 |
SI5441DC-T1-GE3 | Vishay Siliconix | MOSFET P-CH 20V 3.9A 1206-8 | - | 0 | Details |
 |
SI5442DU-T1-GE3 | Vishay Siliconix | MOSFET N-CH 20V 25A PPAK CHIPFET | - | 9000 | Details |
 |
SI5443DC-T1-E3 | Vishay Siliconix | MOSFET P-CH 20V 3.6A 1206-8 | - | 0 | Details |
 |
SI5443DC-T1-GE3 | Vishay Siliconix | MOSFET P-CH 20V 3.6A 1206-8 | - | 0 | Details |
 |
SI5445BDC-T1-E3 | Vishay Siliconix | MOSFET P-CH 8V 5.2A 1206-8 | - | 0 | Details |
 |
SI5445BDC-T1-GE3 | Vishay Siliconix | MOSFET P-CH 8V 5.2A 1206-8 | - | 0 | Details |
 |
SI5446DU-T1-GE3 | Vishay Siliconix | MOSFET N-CH 30V 25A CHIPFET | - | 239726 | Details |
 |
SI5447DC-T1-E3 | Vishay Siliconix | MOSFET P-CH 20V 3.5A 1206-8 | - | 0 | Details |