SI4561DY-T1-GE3

MOSFET N/P-CH 40V 6.8A 8-SOIC
SI4561DY-T1-GE3 P1
SI4561DY-T1-GE3 P1
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Vishay Siliconix ~ SI4561DY-T1-GE3

Part Number
SI4561DY-T1-GE3
Manufacturer
Vishay Siliconix
Description
MOSFET N/P-CH 40V 6.8A 8-SOIC
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Data sheet
- SI4561DY-T1-GE3 PDF online browsing
Family
Transistors - FETs, MOSFETs - Arrays
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Product Parameter

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Part Number SI4561DY-T1-GE3
Part Status Obsolete
FET Type N and P-Channel
FET Feature Logic Level Gate
Drain to Source Voltage (Vdss) 40V
Current - Continuous Drain (Id) @ 25°C 6.8A, 7.2A
Rds On (Max) @ Id, Vgs 35.5 mOhm @ 5A, 10V
Vgs(th) (Max) @ Id 3V @ 250µA
Gate Charge (Qg) (Max) @ Vgs 20nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds 640pF @ 20V
Power - Max 3W, 3.3W
Operating Temperature -55°C ~ 150°C (TJ)
Mounting Type Surface Mount
Package / Case 8-SOIC (0.154", 3.90mm Width)
Supplier Device Package 8-SO

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