Images are for reference only.
See Product Specifications for product details.
| Part Number | SI4102DY-T1-GE3 |
|---|---|
| Part Status | Active |
| FET Type | N-Channel |
| Technology | MOSFET (Metal Oxide) |
| Drain to Source Voltage (Vdss) | 100V |
| Current - Continuous Drain (Id) @ 25°C | 3.8A (Tc) |
| Drive Voltage (Max Rds On,Min Rds On) | 6V, 10V |
| Vgs(th) (Max) @ Id | 4V @ 250µA |
| Gate Charge (Qg) (Max) @ Vgs | 11nC @ 10V |
| Input Capacitance (Ciss) (Max) @ Vds | 370pF @ 50V |
| Vgs (Max) | ±20V |
| FET Feature | - |
| Power Dissipation (Max) | 2.4W (Ta), 4.8W (Tc) |
| Rds On (Max) @ Id, Vgs | 158 mOhm @ 2.7A, 10V |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Mounting Type | Surface Mount |
| Supplier Device Package | 8-SO |
| Package / Case | 8-SOIC (0.154", 3.90mm Width) |
| Image | Part Number | Manufacturers | Description | In Stock | View | |
|---|---|---|---|---|---|---|
 |
SI4100DY-T1-E3 | Vishay Siliconix | MOSFET N-CH 100V 6.8A 8-SOIC | - | 0 | Details |
 |
SI4100DY-T1-GE3 | Vishay Siliconix | MOSFET N-CH 100V 6.8A 8-SOIC | - | 0 | Details |
 |
SI4101DY-T1-GE3 | Vishay Siliconix | MOSFET P-CH 30V 25.7A 8SOIC | - | 0 | Details |
 |
SI4102DY-T1-E3 | Vishay Siliconix | MOSFET N-CH 100V 3.8A 8-SOIC | - | 0 | Details |
 |
SI4102DY-T1-GE3 | Vishay Siliconix | MOSFET N-CH 100V 3.8A 8-SOIC | - | 2500 | Details |
 |
SI4103DY-T1-GE3 | Vishay Siliconix | MOSFET P-CHAN 30V SO-8 | - | 198445 | Details |
 |
SI4104DY-T1-E3 | Vishay Siliconix | MOSFET N-CH 100V 4.6A 8-SOIC | - | 0 | Details |
 |
SI4104DY-T1-GE3 | Vishay Siliconix | MOSFET N-CH 100V 4.6A 8-SOIC | - | 0 | Details |
 |
SI4108DY-T1-GE3 | Vishay Siliconix | MOSFET N-CH 75V 20.5A 8-SOIC | - | 0 | Details |