Images are for reference only.
See Product Specifications for product details.
| Part Number | SI3440DV-T1-GE3 |
|---|---|
| Part Status | Active |
| FET Type | N-Channel |
| Technology | MOSFET (Metal Oxide) |
| Drain to Source Voltage (Vdss) | 150V |
| Current - Continuous Drain (Id) @ 25°C | 1.2A (Ta) |
| Drive Voltage (Max Rds On,Min Rds On) | 6V, 10V |
| Vgs(th) (Max) @ Id | 4V @ 250µA |
| Gate Charge (Qg) (Max) @ Vgs | 8nC @ 10V |
| Input Capacitance (Ciss) (Max) @ Vds | - |
| Vgs (Max) | ±20V |
| FET Feature | - |
| Power Dissipation (Max) | 1.14W (Ta) |
| Rds On (Max) @ Id, Vgs | 375 mOhm @ 1.5A, 10V |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Mounting Type | Surface Mount |
| Supplier Device Package | 6-TSOP |
| Package / Case | SOT-23-6 Thin, TSOT-23-6 |
| Image | Part Number | Manufacturers | Description | In Stock | View | |
|---|---|---|---|---|---|---|
 |
SI3440ADV-T1-GE3 | Vishay Siliconix | MOSFET N-CH 150V 2.2A 6TSOP | - | 446630 | Details |
 |
SI3440DV-T1-E3 | Vishay Siliconix | MOSFET N-CH 150V 1.2A 6-TSOP | - | 6000 | Details |
 |
SI3440DV-T1-GE3 | Vishay Siliconix | MOSFET N-CH 150V 1.2A 6-TSOP | - | 3000 | Details |
 |
SI3441BDV-T1-E3 | Vishay Siliconix | MOSFET P-CH 20V 2.45A 6-TSOP | - | 0 | Details |
 |
SI3441BDV-T1-GE3 | Vishay Siliconix | MOSFET P-CH 20V 2.45A 6-TSOP | - | 0 | Details |
 |
SI3442BDV-T1-E3 | Vishay Siliconix | MOSFET N-CH 20V 3A 6-TSOP | - | 9000 | Details |
 |
SI3442BDV-T1-GE3 | Vishay Siliconix | MOSFET N-CH 20V 3A 6-TSOP | - | 0 | Details |
 |
SI3442CDV-T1-GE3 | Vishay Siliconix | MOSFET N-CH 20V 8A 6TSOP | - | 0 | Details |
 |
SI3442DV | Fairchild/ON Semiconductor | MOSFET N-CH 20V 4.1A SSOT-6 | 0 | Details | |
 |
SI3443BDV-T1-E3 | Vishay Siliconix | MOSFET P-CH 20V 3.6A 6-TSOP | - | 18000 | Details |
 |
SI3443BDV-T1-GE3 | Vishay Siliconix | MOSFET P-CH 20V 3.6A 6-TSOP | - | 0 | Details |
 |
SI3443CDV-T1-E3 | Vishay Siliconix | MOSFET P-CH 20V 5.97A 6TSOP | - | 3000 | Details |