SI1078X-T1-GE3

MOSFET N-CH 30V 1.02A SOT563F
SI1078X-T1-GE3 P1
SI1078X-T1-GE3 P1
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Vishay Siliconix ~ SI1078X-T1-GE3

Part Number
SI1078X-T1-GE3
Manufacturer
Vishay Siliconix
Description
MOSFET N-CH 30V 1.02A SOT563F
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Data sheet
- SI1078X-T1-GE3 PDF online browsing
Family
Transistors - FETs, MOSFETs - Single
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Product Parameter

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Part Number SI1078X-T1-GE3
Part Status Active
FET Type N-Channel
Technology MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 30V
Current - Continuous Drain (Id) @ 25°C 1.02A (Tc)
Drive Voltage (Max Rds On,Min Rds On) 2.5V, 10V
Vgs(th) (Max) @ Id 1.5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs 3nC @ 4.5V
Input Capacitance (Ciss) (Max) @ Vds 110pF @ 15V
Vgs (Max) ±12V
FET Feature -
Power Dissipation (Max) 240mW (Tc)
Rds On (Max) @ Id, Vgs 142 mOhm @ 1A, 10V
Operating Temperature -55°C ~ 150°C (TJ)
Mounting Type Surface Mount
Supplier Device Package -
Package / Case SOT-563, SOT-666

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