Images are for reference only.
See Product Specifications for product details.
| Part Number | SI1054X-T1-GE3 |
|---|---|
| Part Status | Obsolete |
| FET Type | N-Channel |
| Technology | MOSFET (Metal Oxide) |
| Drain to Source Voltage (Vdss) | 12V |
| Current - Continuous Drain (Id) @ 25°C | - |
| Drive Voltage (Max Rds On,Min Rds On) | 1.8V, 4.5V |
| Vgs(th) (Max) @ Id | 1V @ 250µA |
| Gate Charge (Qg) (Max) @ Vgs | 8.57nC @ 5V |
| Input Capacitance (Ciss) (Max) @ Vds | 480pF @ 6V |
| Vgs (Max) | ±8V |
| FET Feature | - |
| Power Dissipation (Max) | 236mW (Ta) |
| Rds On (Max) @ Id, Vgs | 95 mOhm @ 1.32A, 4.5V |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Mounting Type | Surface Mount |
| Supplier Device Package | SC-89-6 |
| Package / Case | SOT-563, SOT-666 |
| Image | Part Number | Manufacturers | Description | In Stock | View | |
|---|---|---|---|---|---|---|
 |
SI1050X-T1-E3 | Vishay Siliconix | MOSFET N-CH 8V 1.34A SOT563F | - | 0 | Details |
 |
SI1050X-T1-GE3 | Vishay Siliconix | MOSFET N-CH 8V 1.34A SC-89-6 | - | 12000 | Details |
 |
SI1051X-T1-E3 | Vishay Siliconix | MOSFET P-CH 8V 1.2A SC89-6 | - | 0 | Details |
 |
SI1051X-T1-GE3 | Vishay Siliconix | MOSFET P-CH 8V 1.2A SC89-6 | - | 0 | Details |
 |
SI1054X-T1-E3 | Vishay Siliconix | MOSFET N-CH 12V 1.32A SC89-6 | - | 0 | Details |
 |
SI1054X-T1-GE3 | Vishay Siliconix | MOSFET N-CH 12V 1.32A SC89-6 | - | 0 | Details |
 |
SI1056X-T1-E3 | Vishay Siliconix | MOSFET N-CH 20V 1.32A SOT563F | - | 0 | Details |
 |
SI1056X-T1-GE3 | Vishay Siliconix | MOSFET N-CH 20V SC-89-6 | - | 0 | Details |
 |
SI1058X-T1-E3 | Vishay Siliconix | MOSFET N-CH 20V 1.3A SOT563F | - | 0 | Details |
 |
SI1058X-T1-GE3 | Vishay Siliconix | MOSFET N-CH 20V SC89 | - | 0 | Details |