MT3S20P(TE12L,F)

TRANS RF NPN 12V 1GHZ PW-MINI
MT3S20P(TE12L,F) P1
MT3S20P(TE12L,F) P1
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Toshiba Semiconductor and Storage ~ MT3S20P(TE12L,F)

Part Number
MT3S20P(TE12L,F)
Manufacturer
Toshiba Semiconductor and Storage
Description
TRANS RF NPN 12V 1GHZ PW-MINI
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Data sheet
- MT3S20P(TE12L,F) PDF online browsing
Family
Transistors - Bipolar (BJT) - RF
  • In Stock : 1000 pcs
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Product Parameter

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Part Number MT3S20P(TE12L,F)
Part Status Active
Transistor Type NPN
Voltage - Collector Emitter Breakdown (Max) 12V
Frequency - Transition 7GHz
Noise Figure (dB Typ @ f) 1.45dB @ 1GHz
Gain 16.5dB
Power - Max 1.8W
DC Current Gain (hFE) (Min) @ Ic, Vce 100 @ 50mA, 5V
Current - Collector (Ic) (Max) 80mA
Operating Temperature 150°C (TJ)
Mounting Type Surface Mount
Package / Case TO-243AA
Supplier Device Package PW-MINI

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