2SK2917(F)

MOSFET N-CH 500V 18A TO-3PN
2SK2917(F) P1
2SK2917(F) P1
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Toshiba Semiconductor and Storage ~ 2SK2917(F)

Part Number
2SK2917(F)
Manufacturer
Toshiba Semiconductor and Storage
Description
MOSFET N-CH 500V 18A TO-3PN
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Data sheet
2SK2917(F).pdf 2SK2917(F) PDF online browsing
Family
Transistors - FETs, MOSFETs - Single
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Product Parameter

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Part Number 2SK2917(F)
Part Status Obsolete
FET Type N-Channel
Technology MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 500V
Current - Continuous Drain (Id) @ 25°C 18A (Ta)
Drive Voltage (Max Rds On,Min Rds On) 10V
Vgs(th) (Max) @ Id 4V @ 1mA
Gate Charge (Qg) (Max) @ Vgs 80nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds 3720pF @ 10V
Vgs (Max) ±30V
FET Feature -
Power Dissipation (Max) 90W (Tc)
Rds On (Max) @ Id, Vgs 270 mOhm @ 10A, 10V
Operating Temperature 150°C (TJ)
Mounting Type Through Hole
Supplier Device Package TO-3P(N)IS
Package / Case TO-3P-3, SC-65-3

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