CSD25303W1015

MOSFET P-CH 20V 3A 6DSBGA
CSD25303W1015 P1
CSD25303W1015 P1
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Texas Instruments ~ CSD25303W1015

Part Number
CSD25303W1015
Manufacturer
Texas Instruments
Description
MOSFET P-CH 20V 3A 6DSBGA
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Data sheet
CSD25303W1015.pdf CSD25303W1015 PDF online browsing
Family
Transistors - FETs, MOSFETs - Single
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Product Parameter

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Part Number CSD25303W1015
Part Status Obsolete
FET Type P-Channel
Technology MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 20V
Current - Continuous Drain (Id) @ 25°C 3A (Tc)
Drive Voltage (Max Rds On,Min Rds On) 1.8V, 4.5V
Vgs(th) (Max) @ Id 1V @ 250µA
Gate Charge (Qg) (Max) @ Vgs 4.3nC @ 4.5V
Input Capacitance (Ciss) (Max) @ Vds 435pF @ 10V
Vgs (Max) ±8V
FET Feature -
Power Dissipation (Max) 1.5W (Ta)
Rds On (Max) @ Id, Vgs 58 mOhm @ 1.5A, 4.5V
Operating Temperature -55°C ~ 150°C (TJ)
Mounting Type Surface Mount
Supplier Device Package 6-DSBGA (1x1.5)
Package / Case 6-UFBGA, DSBGA

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