CSD19537Q3

MOSFET N-CH 100V 50A 8VSON
CSD19537Q3 P1
CSD19537Q3 P1
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Texas Instruments ~ CSD19537Q3

Part Number
CSD19537Q3
Manufacturer
Texas Instruments
Description
MOSFET N-CH 100V 50A 8VSON
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Data sheet
- CSD19537Q3 PDF online browsing
Family
Transistors - FETs, MOSFETs - Single
  • In Stock : 2500 pcs
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Product Parameter

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Part Number CSD19537Q3
Part Status Active
FET Type N-Channel
Technology MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 100V
Current - Continuous Drain (Id) @ 25°C 50A (Ta)
Drive Voltage (Max Rds On,Min Rds On) 6V, 10V
Vgs(th) (Max) @ Id 3.6V @ 250µA
Gate Charge (Qg) (Max) @ Vgs 21nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds 1680pF @ 50V
Vgs (Max) ±20V
FET Feature -
Power Dissipation (Max) 2.8W (Ta), 83W (Tc)
Rds On (Max) @ Id, Vgs 14.5 mOhm @ 10A, 10V
Operating Temperature -55°C ~ 150°C (TJ)
Mounting Type Surface Mount
Supplier Device Package 8-VSON (3.3x3.3)
Package / Case 8-PowerVDFN

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