CSD13302WT

CHANNEL NEXFET POWER MOSFET
CSD13302WT P1
CSD13302WT P1
Images are for reference only.
See Product Specifications for product details.

Texas Instruments ~ CSD13302WT

Part Number
CSD13302WT
Manufacturer
Texas Instruments
Description
CHANNEL NEXFET POWER MOSFET
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Data sheet
- CSD13302WT PDF online browsing
Family
Transistors - FETs, MOSFETs - Single
  • In Stock : 10000 pcs
  • Reference Price : submit a request

Submit a Request For Quotation on quantities greater than those displayed.

Product Parameter

All Products

Part Number CSD13302WT
Part Status Active
FET Type N-Channel
Technology MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 12V
Current - Continuous Drain (Id) @ 25°C 1.6A (Ta)
Drive Voltage (Max Rds On,Min Rds On) 2.5V, 4.5V
Vgs(th) (Max) @ Id 1.3V @ 250µA
Gate Charge (Qg) (Max) @ Vgs 7.8nC @ 4.5V
Input Capacitance (Ciss) (Max) @ Vds 862pF @ 6V
Vgs (Max) ±10V
FET Feature -
Power Dissipation (Max) 1.8W (Ta)
Rds On (Max) @ Id, Vgs 17.1 mOhm @ 1A, 4.5V
Operating Temperature -55°C ~ 150°C (TJ)
Mounting Type Surface Mount
Supplier Device Package 4-DSBGA (1x1)
Package / Case 4-UFBGA, DSBGA

Related Products

All Products