CSD19536KTT

MOSFET N-CH 100V 200A TO263
CSD19536KTT P1
CSD19536KTT P1
Images are for reference only.
See Product Specifications for product details.

Texas Instruments ~ CSD19536KTT

Part Number
CSD19536KTT
Manufacturer
Texas Instruments
Description
MOSFET N-CH 100V 200A TO263
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Data sheet
- CSD19536KTT PDF online browsing
Family
Transistors - FETs, MOSFETs - Single
  • In Stock : 0 pcs
  • Reference Price : submit a request

Submit a Request For Quotation on quantities greater than those displayed.

Product Parameter

All Products

Part Number CSD19536KTT
Part Status Active
FET Type N-Channel
Technology MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 100V
Current - Continuous Drain (Id) @ 25°C 200A (Ta)
Drive Voltage (Max Rds On,Min Rds On) 6V, 10V
Vgs(th) (Max) @ Id 3.2V @ 250µA
Gate Charge (Qg) (Max) @ Vgs 153nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds 12000pF @ 50V
Vgs (Max) ±20V
FET Feature -
Power Dissipation (Max) 375W (Tc)
Rds On (Max) @ Id, Vgs 2.4 mOhm @ 100A, 10V
Operating Temperature -55°C ~ 175°C (TJ)
Mounting Type Surface Mount
Supplier Device Package DDPAK/TO-263-3
Package / Case TO-263-4, D²Pak (3 Leads + Tab), TO-263AA

Related Products

All Products