TSM10N80CI C0G

MOSFET N-CH 800V 9.5A ITO220
TSM10N80CI C0G P1
TSM10N80CI C0G P1
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Taiwan Semiconductor Corporation ~ TSM10N80CI C0G

Part Number
TSM10N80CI C0G
Manufacturer
Taiwan Semiconductor Corporation
Description
MOSFET N-CH 800V 9.5A ITO220
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Data sheet
- TSM10N80CI C0G PDF online browsing
Family
Transistors - FETs, MOSFETs - Single
  • In Stock : 19601 pcs
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Product Parameter

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Part Number TSM10N80CI C0G
Part Status Active
FET Type N-Channel
Technology MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 800V
Current - Continuous Drain (Id) @ 25°C 9.5A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 10V
Rds On (Max) @ Id, Vgs 1.05 Ohm @ 4.75A, 10V
Vgs(th) (Max) @ Id 4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs 53nC @ 10V
Vgs (Max) ±30V
Input Capacitance (Ciss) (Max) @ Vds 2336pF @ 25V
FET Feature -
Power Dissipation (Max) 48W (Tc)
Operating Temperature -55°C ~ 150°C (TJ)
Mounting Type Through Hole
Supplier Device Package ITO-220AB
Package / Case TO-220-3 Full Pack, Isolated Tab

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