SCT2160KEC

MOSFET N-CH 1200V 22A TO-247
SCT2160KEC P1
SCT2160KEC P1
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Rohm Semiconductor ~ SCT2160KEC

Part Number
SCT2160KEC
Manufacturer
Rohm Semiconductor
Description
MOSFET N-CH 1200V 22A TO-247
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Data sheet
SCT2160KEC.pdf SCT2160KEC PDF online browsing
Family
Transistors - FETs, MOSFETs - Single
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Product Parameter

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Part Number SCT2160KEC
Part Status Active
FET Type N-Channel
Technology SiCFET (Silicon Carbide)
Drain to Source Voltage (Vdss) 1200V
Current - Continuous Drain (Id) @ 25°C 22A (Tc)
Drive Voltage (Max Rds On,Min Rds On) 18V
Vgs(th) (Max) @ Id 4V @ 2.5mA
Gate Charge (Qg) (Max) @ Vgs 62nC @ 18V
Input Capacitance (Ciss) (Max) @ Vds 1200pF @ 800V
Vgs (Max) +22V, -6V
FET Feature -
Power Dissipation (Max) 165W (Tc)
Rds On (Max) @ Id, Vgs 208 mOhm @ 7A, 18V
Operating Temperature 175°C (TJ)
Mounting Type Through Hole
Supplier Device Package TO-247
Package / Case TO-247-3

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