RCD051N20TL

MOSFET N-CH 200V 5A CPT3
RCD051N20TL P1
RCD051N20TL P1
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Rohm Semiconductor ~ RCD051N20TL

Part Number
RCD051N20TL
Manufacturer
Rohm Semiconductor
Description
MOSFET N-CH 200V 5A CPT3
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Data sheet
RCD051N20TL.pdf RCD051N20TL PDF online browsing
Family
Transistors - FETs, MOSFETs - Single
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Product Parameter

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Part Number RCD051N20TL
Part Status Active
FET Type N-Channel
Technology MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 200V
Current - Continuous Drain (Id) @ 25°C 5A (Tc)
Drive Voltage (Max Rds On,Min Rds On) 10V
Vgs(th) (Max) @ Id 5.25V @ 1mA
Gate Charge (Qg) (Max) @ Vgs 8.3nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds 330pF @ 25V
Vgs (Max) ±30V
FET Feature -
Power Dissipation (Max) 850mW (Ta), 20W (Tc)
Rds On (Max) @ Id, Vgs 760 mOhm @ 2.5A, 10V
Operating Temperature 150°C (TJ)
Mounting Type Surface Mount
Supplier Device Package CPT3
Package / Case TO-252-3, DPak (2 Leads + Tab), SC-63

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