RAQ045P01TCR

MOSFET P-CH 12V 4.5A TUMT6
RAQ045P01TCR P1
RAQ045P01TCR P1
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Rohm Semiconductor ~ RAQ045P01TCR

Part Number
RAQ045P01TCR
Manufacturer
Rohm Semiconductor
Description
MOSFET P-CH 12V 4.5A TUMT6
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Data sheet
- RAQ045P01TCR PDF online browsing
Family
Transistors - FETs, MOSFETs - Single
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Product Parameter

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Part Number RAQ045P01TCR
Part Status Active
FET Type P-Channel
Technology MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 12V
Current - Continuous Drain (Id) @ 25°C 4.5A (Ta)
Drive Voltage (Max Rds On,Min Rds On) 1.5V, 4.5V
Vgs(th) (Max) @ Id 1V @ 1mA
Gate Charge (Qg) (Max) @ Vgs 40nC @ 4.5V
Input Capacitance (Ciss) (Max) @ Vds 4200pF @ 6V
Vgs (Max) -8V
FET Feature -
Power Dissipation (Max) 600mW (Ta)
Rds On (Max) @ Id, Vgs 30 mOhm @ 4.5A, 4.5V
Operating Temperature 150°C (TJ)
Mounting Type Surface Mount
Supplier Device Package TSMT6 (SC-95)
Package / Case SOT-23-6 Thin, TSOT-23-6

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