R8008ANX

MOSFET N-CH 800V 8A TO-220FM
R8008ANX P1
R8008ANX P1
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Rohm Semiconductor ~ R8008ANX

Part Number
R8008ANX
Manufacturer
Rohm Semiconductor
Description
MOSFET N-CH 800V 8A TO-220FM
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Data sheet
R8008ANX.pdf R8008ANX PDF online browsing
Family
Transistors - FETs, MOSFETs - Single
  • In Stock : 803 pcs
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Product Parameter

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Part Number R8008ANX
Part Status Active
FET Type N-Channel
Technology MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 800V
Current - Continuous Drain (Id) @ 25°C 8A (Ta)
Drive Voltage (Max Rds On,Min Rds On) 10V
Vgs(th) (Max) @ Id 5V @ 1mA
Gate Charge (Qg) (Max) @ Vgs 39nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds 1080pF @ 25V
Vgs (Max) ±30V
FET Feature -
Power Dissipation (Max) 50W (Tc)
Rds On (Max) @ Id, Vgs 1.03 Ohm @ 4A, 10V
Operating Temperature 150°C (TJ)
Mounting Type Through Hole
Supplier Device Package TO-220FM
Package / Case TO-220-2 Full Pack

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