EMB10T2R

TRANS 2PNP PREBIAS 0.15W EMT6
EMB10T2R P1
EMB10T2R P2
EMB10T2R P1
EMB10T2R P2
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Rohm Semiconductor ~ EMB10T2R

Part Number
EMB10T2R
Manufacturer
Rohm Semiconductor
Description
TRANS 2PNP PREBIAS 0.15W EMT6
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Data sheet
EMB10T2R.pdf EMB10T2R PDF online browsing
Family
Transistors - Bipolar (BJT) - Arrays, Pre-Biased
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Product Parameter

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Part Number EMB10T2R
Part Status Active
Transistor Type 2 PNP - Pre-Biased (Dual)
Current - Collector (Ic) (Max) 100mA
Voltage - Collector Emitter Breakdown (Max) 50V
Resistor - Base (R1) (Ohms) 2.2k
Resistor - Emitter Base (R2) (Ohms) 47k
DC Current Gain (hFE) (Min) @ Ic, Vce 80 @ 10mA, 5V
Vce Saturation (Max) @ Ib, Ic 300mV @ 250µA, 5mA
Current - Collector Cutoff (Max) 500nA
Frequency - Transition 250MHz
Power - Max 150mW
Mounting Type Surface Mount
Package / Case SOT-563, SOT-666
Supplier Device Package EMT6

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