SSU1N60BTU-WS

MOSFET N-CH 600V 0.9A IPAK
SSU1N60BTU-WS P1
SSU1N60BTU-WS P1
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ON Semiconductor ~ SSU1N60BTU-WS

Part Number
SSU1N60BTU-WS
Manufacturer
ON Semiconductor
Description
MOSFET N-CH 600V 0.9A IPAK
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Data sheet
- SSU1N60BTU-WS PDF online browsing
Family
Transistors - FETs, MOSFETs - Single
  • In Stock : 282661 pcs
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Product Parameter

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Part Number SSU1N60BTU-WS
Part Status Not For New Designs
FET Type N-Channel
Technology MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 600V
Current - Continuous Drain (Id) @ 25°C 900mA (Tc)
Drive Voltage (Max Rds On, Min Rds On) 10V
Rds On (Max) @ Id, Vgs 12 Ohm @ 450mA, 10V
Vgs(th) (Max) @ Id 4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs 7.7nC @ 10V
Vgs (Max) ±30V
Input Capacitance (Ciss) (Max) @ Vds 215pF @ 25V
FET Feature -
Power Dissipation (Max) 2.5W (Ta), 28W (Tc)
Operating Temperature -55°C ~ 150°C (TJ)
Mounting Type Through Hole
Supplier Device Package I-PAK
Package / Case TO-251-3 Short Leads, IPak, TO-251AA

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