NDD02N60ZT4G

MOSFET N-CH 600V DPAK
NDD02N60ZT4G P1
NDD02N60ZT4G P1
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ON Semiconductor ~ NDD02N60ZT4G

Part Number
NDD02N60ZT4G
Manufacturer
ON Semiconductor
Description
MOSFET N-CH 600V DPAK
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Data sheet
- NDD02N60ZT4G PDF online browsing
Family
Transistors - FETs, MOSFETs - Single
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Product Parameter

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Part Number NDD02N60ZT4G
Part Status Obsolete
FET Type N-Channel
Technology MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 600V
Current - Continuous Drain (Id) @ 25°C 2.2A (Tc)
Drive Voltage (Max Rds On,Min Rds On) 10V
Vgs(th) (Max) @ Id 4.5V @ 50µA
Gate Charge (Qg) (Max) @ Vgs 16nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds 325pF @ 25V
Vgs (Max) ±30V
FET Feature -
Power Dissipation (Max) 57W (Tc)
Rds On (Max) @ Id, Vgs 4.8 Ohm @ 1A, 10V
Operating Temperature -55°C ~ 150°C (TJ)
Mounting Type Surface Mount
Supplier Device Package DPAK
Package / Case TO-252-3, DPak (2 Leads + Tab), SC-63

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