MTD10N10ELT4

MOSFET N-CH 100V 10A DPAK
MTD10N10ELT4 P1
MTD10N10ELT4 P1
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ON Semiconductor ~ MTD10N10ELT4

Part Number
MTD10N10ELT4
Manufacturer
ON Semiconductor
Description
MOSFET N-CH 100V 10A DPAK
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Data sheet
- MTD10N10ELT4 PDF online browsing
Family
Transistors - FETs, MOSFETs - Single
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Product Parameter

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Part Number MTD10N10ELT4
Part Status Obsolete
FET Type N-Channel
Technology MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 100V
Current - Continuous Drain (Id) @ 25°C 10A (Tc)
Drive Voltage (Max Rds On,Min Rds On) 5V
Vgs(th) (Max) @ Id 2V @ 250µA
Gate Charge (Qg) (Max) @ Vgs 15nC @ 5V
Input Capacitance (Ciss) (Max) @ Vds 1040pF @ 25V
Vgs (Max) ±15V
FET Feature -
Power Dissipation (Max) 1.75W (Ta), 40W (Tc)
Rds On (Max) @ Id, Vgs 220 mOhm @ 5A, 5V
Operating Temperature -55°C ~ 150°C (TJ)
Mounting Type Surface Mount
Supplier Device Package DPAK
Package / Case TO-252-3, DPak (2 Leads + Tab), SC-63

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