Images are for reference only.
See Product Specifications for product details.
| Part Number | IRFW630BTM-FP001 |
|---|---|
| Part Status | Not For New Designs |
| FET Type | N-Channel |
| Technology | MOSFET (Metal Oxide) |
| Drain to Source Voltage (Vdss) | 200V |
| Current - Continuous Drain (Id) @ 25°C | 9A (Tc) |
| Drive Voltage (Max Rds On, Min Rds On) | 10V |
| Rds On (Max) @ Id, Vgs | 400 mOhm @ 4.5A, 10V |
| Vgs(th) (Max) @ Id | 4V @ 250µA |
| Gate Charge (Qg) (Max) @ Vgs | 29nC @ 10V |
| Vgs (Max) | ±30V |
| Input Capacitance (Ciss) (Max) @ Vds | 720pF @ 25V |
| FET Feature | - |
| Power Dissipation (Max) | 3.13W (Ta), 72W (Tc) |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Mounting Type | Surface Mount |
| Supplier Device Package | D²PAK (TO-263AB) |
| Package / Case | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB |
| Image | Part Number | Manufacturers | Description | In Stock | View | |
|---|---|---|---|---|---|---|
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IRFW630BTM-FP001 | ON Semiconductor | MOSFET N-CH 200V 9A D2PAK | - | 123774 | Details |
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IRFW630BTM_FP001 | Fairchild/ON Semiconductor | MOSFET N-CH 200V 9A D2PAK | - | 0 | Details |