FQD12N20LTM-F085

MOSFET N-CH 200V 9A DPAK
FQD12N20LTM-F085 P1
FQD12N20LTM-F085 P1
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ON Semiconductor ~ FQD12N20LTM-F085

Part Number
FQD12N20LTM-F085
Manufacturer
ON Semiconductor
Description
MOSFET N-CH 200V 9A DPAK
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Data sheet
- FQD12N20LTM-F085 PDF online browsing
Family
Transistors - FETs, MOSFETs - Single
  • In Stock : 69006 pcs
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Product Parameter

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Part Number FQD12N20LTM-F085
Part Status Not For New Designs
FET Type N-Channel
Technology MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 200V
Current - Continuous Drain (Id) @ 25°C 9A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 5V, 10V
Rds On (Max) @ Id, Vgs 280 mOhm @ 4.5A, 10V
Vgs(th) (Max) @ Id 2V @ 250µA
Gate Charge (Qg) (Max) @ Vgs 21nC @ 5V
Vgs (Max) ±20V
Input Capacitance (Ciss) (Max) @ Vds 1080pF @ 25V
FET Feature -
Power Dissipation (Max) 2.5W (Ta), 55W (Tc)
Operating Temperature -55°C ~ 150°C (TJ)
Mounting Type Surface Mount
Supplier Device Package D-Pak
Package / Case TO-252-3, DPak (2 Leads + Tab), SC-63

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