FGD3N60LSDTM-T

INTEGRATED CIRCUIT
FGD3N60LSDTM-T P1
FGD3N60LSDTM-T P1
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ON Semiconductor ~ FGD3N60LSDTM-T

Part Number
FGD3N60LSDTM-T
Manufacturer
ON Semiconductor
Description
INTEGRATED CIRCUIT
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Data sheet
- FGD3N60LSDTM-T PDF online browsing
Family
Transistors - IGBTs - Single
  • In Stock : 22566 pcs
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Product Parameter

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Part Number FGD3N60LSDTM-T
Part Status Obsolete
IGBT Type -
Voltage - Collector Emitter Breakdown (Max) 600V
Current - Collector (Ic) (Max) 6A
Current - Collector Pulsed (Icm) 25A
Vce(on) (Max) @ Vge, Ic 1.5V @ 10V, 3A
Power - Max 40W
Switching Energy 250µJ (on), 1mJ (off)
Input Type Standard
Gate Charge 12.5nC
Td (on/off) @ 25°C 40ns/600ns
Test Condition 480V, 3A, 470 Ohm, 10V
Reverse Recovery Time (trr) 234ns
Operating Temperature -55°C ~ 150°C (TJ)
Mounting Type Surface Mount
Package / Case TO-252-3, DPak (2 Leads + Tab), SC-63
Supplier Device Package TO-252, (D-Pak)

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