APT1001R1BN

MOSFET N-CH 1KV 10.5A TO247AD
APT1001R1BN P1
APT1001R1BN P1
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Microsemi Corporation ~ APT1001R1BN

Part Number
APT1001R1BN
Manufacturer
Microsemi Corporation
Description
MOSFET N-CH 1KV 10.5A TO247AD
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Data sheet
APT1001R1BN.pdf APT1001R1BN PDF online browsing
Family
Transistors - FETs, MOSFETs - Single
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Product Parameter

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Part Number APT1001R1BN
Part Status Obsolete
FET Type N-Channel
Technology MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 1000V
Current - Continuous Drain (Id) @ 25°C 10.5A (Tc)
Drive Voltage (Max Rds On,Min Rds On) 10V
Vgs(th) (Max) @ Id 4V @ 1mA
Gate Charge (Qg) (Max) @ Vgs 130nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds 2950pF @ 25V
Vgs (Max) ±30V
FET Feature -
Power Dissipation (Max) 310W (Tc)
Rds On (Max) @ Id, Vgs 1.1 Ohm @ 5.25A, 10V
Operating Temperature -55°C ~ 150°C (TJ)
Mounting Type Through Hole
Supplier Device Package TO-247AD
Package / Case TO-247-3

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