IXTN110N20L2

MOSFET N-CH 200V 100A SOT-227
IXTN110N20L2 P1
IXTN110N20L2 P1
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IXYS ~ IXTN110N20L2

Part Number
IXTN110N20L2
Manufacturer
IXYS
Description
MOSFET N-CH 200V 100A SOT-227
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Data sheet
IXTN110N20L2.pdf IXTN110N20L2 PDF online browsing
Family
Transistors - FETs, MOSFETs - Single
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Product Parameter

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Part Number IXTN110N20L2
Part Status Active
FET Type N-Channel
Technology MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 200V
Current - Continuous Drain (Id) @ 25°C 100A
Drive Voltage (Max Rds On,Min Rds On) 10V
Vgs(th) (Max) @ Id 4.5V @ 3mA
Gate Charge (Qg) (Max) @ Vgs 500nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds 23000pF @ 25V
Vgs (Max) ±20V
FET Feature -
Power Dissipation (Max) 735W (Tc)
Rds On (Max) @ Id, Vgs 24 mOhm @ 55A, 10V
Operating Temperature -55°C ~ 150°C (TJ)
Mounting Type Chassis Mount
Supplier Device Package SOT-227B
Package / Case SOT-227-4, miniBLOC

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