IXTA1R6N100D2HV

MOSFET N-CH
IXTA1R6N100D2HV P1
IXTA1R6N100D2HV P1
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IXYS ~ IXTA1R6N100D2HV

Part Number
IXTA1R6N100D2HV
Manufacturer
IXYS
Description
MOSFET N-CH
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Data sheet
- IXTA1R6N100D2HV PDF online browsing
Family
Transistors - FETs, MOSFETs - Single
  • In Stock : 25452 pcs
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Product Parameter

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Part Number IXTA1R6N100D2HV
Part Status Active
FET Type N-Channel
Technology MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 1000V
Current - Continuous Drain (Id) @ 25°C 1.6A (Tj)
Drive Voltage (Max Rds On, Min Rds On) 0V
Rds On (Max) @ Id, Vgs 10 Ohm @ 800mA, 0V
Vgs(th) (Max) @ Id 4.5V @ 100µA
Gate Charge (Qg) (Max) @ Vgs 27nC @ 5V
Vgs (Max) ±20V
Input Capacitance (Ciss) (Max) @ Vds 645pF @ 10V
FET Feature Depletion Mode
Power Dissipation (Max) 100W (Tc)
Operating Temperature -55°C ~ 150°C (TJ)
Mounting Type Surface Mount
Supplier Device Package TO-263HV
Package / Case TO-263-3, D²Pak (2 Leads + Tab), TO-263AB

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