IXTA05N100

MOSFET N-CH 1000V 0.75A TO-263
IXTA05N100 P1
IXTA05N100 P1
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IXYS ~ IXTA05N100

Part Number
IXTA05N100
Manufacturer
IXYS
Description
MOSFET N-CH 1000V 0.75A TO-263
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Data sheet
- IXTA05N100 PDF online browsing
Family
Transistors - FETs, MOSFETs - Single
  • In Stock : 29 pcs
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Product Parameter

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Part Number IXTA05N100
Part Status Active
FET Type N-Channel
Technology MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 1000V
Current - Continuous Drain (Id) @ 25°C 750mA (Tc)
Drive Voltage (Max Rds On,Min Rds On) 10V
Vgs(th) (Max) @ Id 4.5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs 7.8nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds 260pF @ 25V
Vgs (Max) ±30V
FET Feature -
Power Dissipation (Max) 40W (Tc)
Rds On (Max) @ Id, Vgs 17 Ohm @ 375mA, 10V
Operating Temperature -55°C ~ 150°C (TJ)
Mounting Type Surface Mount
Supplier Device Package TO-263 (IXTA)
Package / Case TO-263-3, D²Pak (2 Leads + Tab), TO-263AB

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