IPDD60R050G7XTMA1

MOSFET NCH 650V 135A PG-HDSOP-10
IPDD60R050G7XTMA1 P1
IPDD60R050G7XTMA1 P1
Images are for reference only.
See Product Specifications for product details.

Infineon Technologies ~ IPDD60R050G7XTMA1

Part Number
IPDD60R050G7XTMA1
Manufacturer
Infineon Technologies
Description
MOSFET NCH 650V 135A PG-HDSOP-10
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Data sheet
- IPDD60R050G7XTMA1 PDF online browsing
Family
Transistors - FETs, MOSFETs - Single
  • In Stock : 11529 pcs
  • Reference Price : submit a request

Submit a Request For Quotation on quantities greater than those displayed.

Product Parameter

All Products

Part Number IPDD60R050G7XTMA1
Part Status Active
FET Type N-Channel
Technology MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 600V
Current - Continuous Drain (Id) @ 25°C 47A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 10V
Rds On (Max) @ Id, Vgs 50 mOhm @ 15.9A, 10V
Vgs(th) (Max) @ Id 4V @ 800µA
Gate Charge (Qg) (Max) @ Vgs 68nC @ 10V
Vgs (Max) ±20V
Input Capacitance (Ciss) (Max) @ Vds 2670pF @ 400V
FET Feature -
Power Dissipation (Max) 278W (Tc)
Operating Temperature -55°C ~ 150°C (TJ)
Mounting Type Surface Mount
Supplier Device Package PG-HDSOP-10-1
Package / Case 10-PowerSOP Module

Related Products

All Products