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See Product Specifications for product details.
| Part Number | IPB083N10N3GATMA1 |
|---|---|
| Part Status | Active |
| FET Type | N-Channel |
| Technology | MOSFET (Metal Oxide) |
| Drain to Source Voltage (Vdss) | 100V |
| Current - Continuous Drain (Id) @ 25°C | 80A (Tc) |
| Drive Voltage (Max Rds On, Min Rds On) | 6V, 10V |
| Rds On (Max) @ Id, Vgs | 8.3 mOhm @ 73A, 10V |
| Vgs(th) (Max) @ Id | 3.5V @ 75µA |
| Gate Charge (Qg) (Max) @ Vgs | 55nC @ 10V |
| Vgs (Max) | ±20V |
| Input Capacitance (Ciss) (Max) @ Vds | 3980pF @ 50V |
| FET Feature | - |
| Power Dissipation (Max) | 125W (Tc) |
| Operating Temperature | -55°C ~ 175°C (TJ) |
| Mounting Type | Surface Mount |
| Supplier Device Package | D²PAK (TO-263AB) |
| Package / Case | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB |
| Image | Part Number | Manufacturers | Description | In Stock | View | |
|---|---|---|---|---|---|---|
 |
IPB083N10N3 G | Infineon Technologies | MOSFET N-CH 100V 80A TO263-3 | - | 2000 | Details |
 |
IPB083N10N3GATMA1 | Infineon Technologies | MOSFET N-CH 100V 80A TO263-3 | - | 88700 | Details |
 |
IPB083N15N5LFATMA1 | Infineon Technologies | DIFFERENTIATED MOSFETS | - | 0 | Details |