IPB037N06N3GATMA1

MOSFET N-CH 60V 90A TO263-3
IPB037N06N3GATMA1 P1
IPB037N06N3GATMA1 P1
Images are for reference only.
See Product Specifications for product details.

Infineon Technologies ~ IPB037N06N3GATMA1

Part Number
IPB037N06N3GATMA1
Manufacturer
Infineon Technologies
Description
MOSFET N-CH 60V 90A TO263-3
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Data sheet
- IPB037N06N3GATMA1 PDF online browsing
Family
Transistors - FETs, MOSFETs - Single
  • In Stock : 80568 pcs
  • Reference Price : submit a request

Submit a Request For Quotation on quantities greater than those displayed.

Product Parameter

All Products

Part Number IPB037N06N3GATMA1
Part Status Active
FET Type N-Channel
Technology MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 60V
Current - Continuous Drain (Id) @ 25°C 90A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 10V
Rds On (Max) @ Id, Vgs 3.7 mOhm @ 90A, 10V
Vgs(th) (Max) @ Id 4V @ 90µA
Gate Charge (Qg) (Max) @ Vgs 98nC @ 10V
Vgs (Max) ±20V
Input Capacitance (Ciss) (Max) @ Vds 11000pF @ 30V
FET Feature -
Power Dissipation (Max) 188W (Tc)
Operating Temperature -55°C ~ 175°C (TJ)
Mounting Type Surface Mount
Supplier Device Package D²PAK (TO-263AB)
Package / Case TO-263-3, D²Pak (2 Leads + Tab), TO-263AB

Related Products

All Products