Images are for reference only.
See Product Specifications for product details.
| Part Number | IPA95R1K2P7XKSA1 |
|---|---|
| Part Status | Active |
| FET Type | N-Channel |
| Technology | MOSFET (Metal Oxide) |
| Drain to Source Voltage (Vdss) | 950V |
| Current - Continuous Drain (Id) @ 25°C | 6A (Tc) |
| Drive Voltage (Max Rds On, Min Rds On) | 10V |
| Rds On (Max) @ Id, Vgs | 1.2 Ohm @ 2.7A, 10V |
| Vgs(th) (Max) @ Id | 3.5V @ 140µA |
| Gate Charge (Qg) (Max) @ Vgs | 15nC @ 10V |
| Vgs (Max) | ±20V |
| Input Capacitance (Ciss) (Max) @ Vds | 478pF @ 400V |
| FET Feature | - |
| Power Dissipation (Max) | 27W (Tc) |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Mounting Type | Through Hole |
| Supplier Device Package | PG-TO220 Full Pack |
| Package / Case | TO-220-3 Full Pack |
| Image | Part Number | Manufacturers | Description | In Stock | View | |
|---|---|---|---|---|---|---|
 |
IPA95R1K2P7XKSA1 | Infineon Technologies | MOSFET N-CH 950V 6A TO252 | - | 35600 | Details |
 |
IPA95R450P7XKSA1 | Infineon Technologies | MOSFET N-CH 950V 14A TO252 | - | 19543 | Details |
 |
IPA95R750P7XKSA1 | Infineon Technologies | MOSFET N-CH 950V 9A TO252 | - | 27102 | Details |