Images are for reference only.
See Product Specifications for product details.
| Part Number | IPA65R190C6XKSA1 |
|---|---|
| Part Status | Active |
| FET Type | N-Channel |
| Technology | MOSFET (Metal Oxide) |
| Drain to Source Voltage (Vdss) | 650V |
| Current - Continuous Drain (Id) @ 25°C | 20.2A (Tc) |
| Drive Voltage (Max Rds On,Min Rds On) | 10V |
| Vgs(th) (Max) @ Id | 3.5V @ 730µA |
| Gate Charge (Qg) (Max) @ Vgs | 73nC @ 10V |
| Input Capacitance (Ciss) (Max) @ Vds | 1620pF @ 100V |
| Vgs (Max) | ±20V |
| FET Feature | - |
| Power Dissipation (Max) | 34W (Tc) |
| Rds On (Max) @ Id, Vgs | 190 mOhm @ 7.3A, 10V |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Mounting Type | Through Hole |
| Supplier Device Package | PG-TO220 Full Pack |
| Package / Case | TO-220-3 Full Pack |
| Image | Part Number | Manufacturers | Description | In Stock | View | |
|---|---|---|---|---|---|---|
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IPA65R045C7XKSA1 | Infineon Technologies | MOSFET N-CH 650V TO220-3 | 0 | Details | |
 |
IPA65R065C7XKSA1 | Infineon Technologies | MOSFET N-CH 650V TO220-3 | 0 | Details | |
 |
IPA65R095C7XKSA1 | Infineon Technologies | MOSFET N-CH 650V TO220-3 | 0 | Details | |
 |
IPA65R099C6XKSA1 | Infineon Technologies | MOSFET N-CH 650V 38A TO220 | - | 365 | Details |
 |
IPA65R110CFDXKSA1 | Infineon Technologies | MOSFET N-CH 650V 31.2A TO220 | - | 0 | Details |
 |
IPA65R110CFDXKSA2 | Infineon Technologies | HIGH POWERLEGACY | - | 16796 | Details |
 |
IPA65R125C7XKSA1 | Infineon Technologies | MOSFET N-CH 650V TO220-3 | 0 | Details | |
 |
IPA65R150CFDXKSA1 | Infineon Technologies | MOSFET N-CH 650V 22.4A TO220 | 2938 | Details | |
|
IPA65R150CFDXKSA2 | Infineon Technologies | HIGH POWERLEGACY | - | 27237 | Details |
 |
IPA65R190C6XKSA1 | Infineon Technologies | MOSFET N-CH 650V 20.2A TO220 | - | 0 | Details |
 |
IPA65R190C7XKSA1 | Infineon Technologies | MOSFET N-CH 650V 8A TO220 | 235 | Details | |
 |
IPA65R190CFD | Infineon Technologies | MOSFET N-CH 650V 17.5A TO220 | - | 767 | Details |