Images are for reference only.
See Product Specifications for product details.
| Part Number | FF11MR12W1M1B11BOMA1 |
|---|---|
| Part Status | Active |
| FET Type | 2 N-Channel (Dual) |
| FET Feature | Silicon Carbide (SiC) |
| Drain to Source Voltage (Vdss) | 1200V (1.2kV) |
| Current - Continuous Drain (Id) @ 25°C | 100A |
| Rds On (Max) @ Id, Vgs | 11 mOhm @ 100A, 15V |
| Vgs(th) (Max) @ Id | 5.55V @ 40mA |
| Gate Charge (Qg) (Max) @ Vgs | 250nC @ 15V |
| Input Capacitance (Ciss) (Max) @ Vds | 7950pF @ 800V |
| Power - Max | - |
| Operating Temperature | -40°C ~ 150°C (TJ) |
| Mounting Type | Chassis Mount |
| Package / Case | Module |
| Supplier Device Package | Module |
| Image | Part Number | Manufacturers | Description | In Stock | View | |
|---|---|---|---|---|---|---|
|
FF11MR12W1M1B11BOMA1 | Infineon Technologies | MOSFET 2 N-CH 1200V 100A MODULE | - | 402 | Details |