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See Product Specifications for product details.
| Part Number | BSZ16DN25NS3GATMA1 |
|---|---|
| Part Status | Active |
| FET Type | N-Channel |
| Technology | MOSFET (Metal Oxide) |
| Drain to Source Voltage (Vdss) | 250V |
| Current - Continuous Drain (Id) @ 25°C | 10.9A (Tc) |
| Drive Voltage (Max Rds On, Min Rds On) | 10V |
| Rds On (Max) @ Id, Vgs | 165 mOhm @ 5.5A, 10V |
| Vgs(th) (Max) @ Id | 4V @ 32µA |
| Gate Charge (Qg) (Max) @ Vgs | 11.4nC @ 10V |
| Vgs (Max) | ±20V |
| Input Capacitance (Ciss) (Max) @ Vds | 920pF @ 100V |
| FET Feature | - |
| Power Dissipation (Max) | 62.5W (Tc) |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Mounting Type | Surface Mount |
| Supplier Device Package | PG-TSDSON-8 |
| Package / Case | 8-PowerTDFN |
| Image | Part Number | Manufacturers | Description | In Stock | View | |
|---|---|---|---|---|---|---|
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BSZ16DN25NS3 G | Infineon Technologies | MOSFET N-CH 250V 10.9A 8TSDSON | - | 5000 | Details |
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BSZ16DN25NS3GATMA1 | Infineon Technologies | MOSFET N-CH 250V 10.9A 8TSDSON | - | 81442 | Details |