BSF134N10NJ3 G

MOSFET N-CH 100V 9A WDSON-2
BSF134N10NJ3 G P1
BSF134N10NJ3 G P1
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Infineon Technologies ~ BSF134N10NJ3 G

Part Number
BSF134N10NJ3 G
Manufacturer
Infineon Technologies
Description
MOSFET N-CH 100V 9A WDSON-2
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Data sheet
- BSF134N10NJ3 G PDF online browsing
Family
Transistors - FETs, MOSFETs - Single
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Product Parameter

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Part Number BSF134N10NJ3 G
Part Status Active
FET Type N-Channel
Technology MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 100V
Current - Continuous Drain (Id) @ 25°C 9A (Ta), 40A (Tc)
Drive Voltage (Max Rds On,Min Rds On) 6V, 10V
Vgs(th) (Max) @ Id 3.5V @ 40µA
Gate Charge (Qg) (Max) @ Vgs 30nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds 2300pF @ 50V
Vgs (Max) ±20V
FET Feature -
Power Dissipation (Max) 2.2W (Ta), 43W (Tc)
Rds On (Max) @ Id, Vgs 13.4 mOhm @ 30A, 10V
Operating Temperature -40°C ~ 150°C (TJ)
Mounting Type Surface Mount
Supplier Device Package MG-WDSON-2, CanPAK M™
Package / Case 3-WDSON

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