BSC026N02KSGAUMA1

MOSFET N-CH 20V 100A TDSON-8
BSC026N02KSGAUMA1 P1
BSC026N02KSGAUMA1 P1
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Infineon Technologies ~ BSC026N02KSGAUMA1

Part Number
BSC026N02KSGAUMA1
Manufacturer
Infineon Technologies
Description
MOSFET N-CH 20V 100A TDSON-8
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Data sheet
- BSC026N02KSGAUMA1 PDF online browsing
Family
Transistors - FETs, MOSFETs - Single
  • In Stock : 95435 pcs
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Product Parameter

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Part Number BSC026N02KSGAUMA1
Part Status Active
FET Type N-Channel
Technology MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 20V
Current - Continuous Drain (Id) @ 25°C 25A (Ta), 100A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 2.5V, 4.5V
Rds On (Max) @ Id, Vgs 2.6 mOhm @ 50A, 4.5V
Vgs(th) (Max) @ Id 1.2V @ 200µA
Gate Charge (Qg) (Max) @ Vgs 52.7nC @ 4.5V
Vgs (Max) ±12V
Input Capacitance (Ciss) (Max) @ Vds 7800pF @ 10V
FET Feature -
Power Dissipation (Max) 2.8W (Ta), 78W (Tc)
Operating Temperature -55°C ~ 150°C (TJ)
Mounting Type Surface Mount
Supplier Device Package PG-TDSON-8
Package / Case 8-PowerTDFN

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