Images are for reference only.
See Product Specifications for product details.
| Part Number | BSC014N06NSTATMA1 |
|---|---|
| Part Status | Active |
| FET Type | N-Channel |
| Technology | MOSFET (Metal Oxide) |
| Drain to Source Voltage (Vdss) | 60V |
| Current - Continuous Drain (Id) @ 25°C | 100A (Tc) |
| Drive Voltage (Max Rds On, Min Rds On) | 6V, 10V |
| Rds On (Max) @ Id, Vgs | 1.45 mOhm @ 50A, 10V |
| Vgs(th) (Max) @ Id | 3.3V @ 120µA |
| Gate Charge (Qg) (Max) @ Vgs | 104nC @ 10V |
| Vgs (Max) | ±20V |
| Input Capacitance (Ciss) (Max) @ Vds | 8125pF @ 30V |
| FET Feature | - |
| Power Dissipation (Max) | 3W (Ta), 188W (Tc) |
| Operating Temperature | -55°C ~ 175°C (TJ) |
| Mounting Type | Surface Mount |
| Supplier Device Package | PG-TDSON-8 FL |
| Package / Case | 8-PowerTDFN |
| Image | Part Number | Manufacturers | Description | In Stock | View | |
|---|---|---|---|---|---|---|
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BSC014N03LS G | Infineon Technologies | MOSFET N-CH 30V 100A TDSON-8 | - | 0 | Details |
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BSC014N03LSGATMA1 | Infineon Technologies | MOSFET N-CH 30V 100A TDSON-8 | - | 96027 | Details |
 |
BSC014N03MS G | Infineon Technologies | MOSFET N-CH 30V 100A TDSON-8 | - | 5000 | Details |
 |
BSC014N03MSGATMA1 | Infineon Technologies | MOSFET N-CH 30V 100A TDSON-8 | - | 96027 | Details |
 |
BSC014N04LS | Infineon Technologies | MOSFET N-CH 40V 32A TDSON-8 | - | 0 | Details |
 |
BSC014N04LSATMA1 | Infineon Technologies | MOSFET N-CH 40V 32A TDSON-8 | - | 69199 | Details |
 |
BSC014N04LSIATMA1 | Infineon Technologies | MOSFET N-CH 40V 100A TDSON-8 | - | 0 | Details |
|
BSC014N04LSTATMA1 | Infineon Technologies | DIFFERENTIATED MOSFETS | - | 54234 | Details |
 |
BSC014N06NSATMA1 | Infineon Technologies | MOSFET N-CH 60V 30A TDSON-8 | - | 20000 | Details |
|
BSC014N06NSTATMA1 | Infineon Technologies | DIFFERENTIATED MOSFETS | - | 39240 | Details |
 |
BSC014NE2LSI | Infineon Technologies | MOSFET N-CH 25V 33A TDSON-8 | - | 20000 | Details |
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BSC014NE2LSIATMA1 | Infineon Technologies | MOSFET N-CH 25V 33A TDSON-8 | - | 96588 | Details |