FQU13N06LTU_WS

MOSFET N-CH 60V 11A IPAK
FQU13N06LTU_WS P1
FQU13N06LTU_WS P1
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Fairchild/ON Semiconductor ~ FQU13N06LTU_WS

Part Number
FQU13N06LTU_WS
Manufacturer
Fairchild/ON Semiconductor
Description
MOSFET N-CH 60V 11A IPAK
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Data sheet
- FQU13N06LTU_WS PDF online browsing
Family
Transistors - FETs, MOSFETs - Single
  • In Stock : 7394 pcs
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Product Parameter

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Part Number FQU13N06LTU_WS
Part Status Active
FET Type N-Channel
Technology MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 60V
Current - Continuous Drain (Id) @ 25°C 11A (Tc)
Drive Voltage (Max Rds On,Min Rds On) 5V, 10V
Vgs(th) (Max) @ Id 2.5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs 6.4nC @ 5V
Input Capacitance (Ciss) (Max) @ Vds 350pF @ 25V
Vgs (Max) ±20V
FET Feature -
Power Dissipation (Max) 2.5W (Ta), 28W (Tc)
Rds On (Max) @ Id, Vgs 115 mOhm @ 5.5A, 10V
Operating Temperature -55°C ~ 150°C (TJ)
Mounting Type Through Hole
Supplier Device Package I-Pak
Package / Case TO-251-3 Short Leads, IPak, TO-251AA

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