FDB3632_F085

MOSFET N-CH 100V 12A D2PAK
FDB3632_F085 P1
FDB3632_F085 P1
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Fairchild/ON Semiconductor ~ FDB3632_F085

Part Number
FDB3632_F085
Manufacturer
Fairchild/ON Semiconductor
Description
MOSFET N-CH 100V 12A D2PAK
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Data sheet
- FDB3632_F085 PDF online browsing
Family
Transistors - FETs, MOSFETs - Single
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Product Parameter

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Part Number FDB3632_F085
Part Status Active
FET Type N-Channel
Technology MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 100V
Current - Continuous Drain (Id) @ 25°C 12A (Ta)
Drive Voltage (Max Rds On,Min Rds On) 10V
Vgs(th) (Max) @ Id 4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs 110nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds 6000pF @ 25V
Vgs (Max) ±20V
FET Feature -
Power Dissipation (Max) 310W (Tc)
Rds On (Max) @ Id, Vgs 9 mOhm @ 80A, 10V
Operating Temperature -55°C ~ 175°C (TJ)
Mounting Type Surface Mount
Supplier Device Package D²PAK (TO-263AB)
Package / Case TO-263-3, D²Pak (2 Leads + Tab), TO-263AB

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