FCP110N65F

MOSFET N-CH 650V 35A TO220
FCP110N65F P1
FCP110N65F P2
FCP110N65F P1
FCP110N65F P2
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Fairchild/ON Semiconductor ~ FCP110N65F

Part Number
FCP110N65F
Manufacturer
Fairchild/ON Semiconductor
Description
MOSFET N-CH 650V 35A TO220
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Data sheet
- FCP110N65F PDF online browsing
Family
Transistors - FETs, MOSFETs - Single
  • In Stock : 649 pcs
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Product Parameter

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Part Number FCP110N65F
Part Status Active
FET Type N-Channel
Technology MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 650V
Current - Continuous Drain (Id) @ 25°C 35A (Tc)
Drive Voltage (Max Rds On,Min Rds On) 10V
Vgs(th) (Max) @ Id 5V @ 3.5mA
Gate Charge (Qg) (Max) @ Vgs 145nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds 4895pF @ 100V
Vgs (Max) ±20V
FET Feature -
Power Dissipation (Max) 357W (Tc)
Rds On (Max) @ Id, Vgs 110 mOhm @ 17.5A, 10V
Operating Temperature -55°C ~ 150°C (TJ)
Mounting Type Through Hole
Supplier Device Package TO-220-3
Package / Case TO-220-3

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