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| Número de pieza | RN1908(T5L,F,T) |
|---|---|
| Estado de la pieza | Active |
| Tipo de transistor | 2 NPN - Pre-Biased (Dual) |
| Current - Collector (Ic) (Max) | 100mA |
| Voltaje: ruptura del emisor del colector (máximo) | 50V |
| Resistencia - Base (R1) (Ohmios) | 22k |
| Resistencia - Base del emisor (R2) (ohmios) | 47k |
| Ganancia de corriente CC (hFE) (Min) @ Ic, Vce | 80 @ 10mA, 5V |
| Saturación de Vce (Máx) @ Ib, Ic | 300mV @ 250µA, 5mA |
| Corriente - corte de colector (máximo) | 100nA (ICBO) |
| Frecuencia - Transición | 250MHz |
| Potencia - Max | 200mW |
| Tipo de montaje | Surface Mount |
| Paquete / caja | 6-TSSOP, SC-88, SOT-363 |
| Paquete de dispositivo del proveedor | US6 |
| Imagen | Número de pieza | Fabricantes | Descripción | En stock | Ver | |
|---|---|---|---|---|---|---|
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RN1901,LF(CT | Toshiba Semiconductor and Storage | TRANS 2NPN PREBIAS 0.2W US6 | 0 | Detalles | |
 |
RN1901FETE85LF | Toshiba Semiconductor and Storage | TRANS 2NPN PREBIAS 0.1W ES6 | 0 | Detalles | |
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RN1902,LF(CT | Toshiba Semiconductor and Storage | TRANS 2NPN PREBIAS 0.2W US6 | 3000 | Detalles | |
 |
RN1902FE,LF(CT | Toshiba Semiconductor and Storage | TRANS 2NPN PREBIAS 0.1W ES6 | - | 4000 | Detalles |
 |
RN1902T5LFT | Toshiba Semiconductor and Storage | TRANS 2NPN PREBIAS 0.2W US6 | 0 | Detalles | |
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RN1903,LF(CT | Toshiba Semiconductor and Storage | TRANS 2NPN PREBIAS 0.2W US6 | 0 | Detalles | |
 |
RN1904,LF(CT | Toshiba Semiconductor and Storage | TRANS 2NPN PREBIAS 0.2W US6 | 6000 | Detalles | |
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RN1904FE,LF(CT | Toshiba Semiconductor and Storage | TRANS 2NPN PREBIAS 0.1W ES6 | - | 4000 | Detalles |
 |
RN1905(T5L,F,T) | Toshiba Semiconductor and Storage | TRANS 2NPN PREBIAS 0.2W US6 | 0 | Detalles | |
 |
RN1905,LF | Toshiba Semiconductor and Storage | TRANS 2NPN PREBIAS 0.2W US6 | 3000 | Detalles | |
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RN1905,LF(CT | Toshiba Semiconductor and Storage | TRANS 2NPN PREBIAS 0.2W US6 | 6000 | Detalles | |
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RN1905FE,LF(CB | Toshiba Semiconductor and Storage | TRANS 2NPN PREBIAS 0.1W ES6 | - | 4000 | Detalles |