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Ver especificaciones del producto para detalles del producto.
| Número de pieza | S5JB R5G |
|---|---|
| Estado de la pieza | Active |
| Tipo de diodo | Standard |
| Voltaje - DC Reverse (Vr) (Max) | 600V |
| Corriente - promedio rectificado (Io) | 5A |
| Voltaje - Adelante (Vf) (Máx) @ Si | 1.1V @ 5A |
| Velocidad | Fast Recovery =< 500ns, > 200mA (Io) |
| Tiempo de recuperación inversa (trr) | - |
| Current - Reverse Leakage @ Vr | 10µA @ 600V |
| Capacitancia @ Vr, F | 40pF @ 4V, 1MHz |
| Tipo de montaje | Surface Mount |
| Paquete / caja | DO-214AA, SMB |
| Paquete de dispositivo del proveedor | DO-214AA (SMB) |
| Temperatura de funcionamiento - unión | -55°C ~ 150°C |
| Imagen | Número de pieza | Fabricantes | Descripción | En stock | Ver | |
|---|---|---|---|---|---|---|
|
S5J M6G | Taiwan Semiconductor Corporation | DIODE GEN PURP 600V 5A DO214AB | - | 404397 | Detalles |
|
S5J R7G | Taiwan Semiconductor Corporation | DIODE GEN PURP 600V 5A DO214AB | - | 356251 | Detalles |
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S5J V6G | Taiwan Semiconductor Corporation | DIODE GEN PURP 600V 5A DO214AB | - | 561419 | Detalles |
|
S5J V7G | Taiwan Semiconductor Corporation | DIODE GEN PURP 600V 5A DO214AB | - | 505295 | Detalles |
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S5J-E3/57T | Vishay Semiconductor Diodes Division | DIODE GEN PURP 600V 5A DO214AB | - | 5950 | Detalles |
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S5J-E3/9AT | Vishay Semiconductor Diodes Division | DIODE GEN PURP 600V 5A DO214AB | - | 0 | Detalles |
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S5J-M3/57T | Vishay Semiconductor Diodes Division | DIODE GPP 5A 600V DO-214AB | - | 0 | Detalles |
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S5J-M3/9AT | Vishay Semiconductor Diodes Division | DIODE GPP 5A 600V DO-214AB | - | 0 | Detalles |
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S5JB M4G | Taiwan Semiconductor Corporation | DIODE GEN PURP 600V 5A DO214AA | - | 601792 | Detalles |
|
S5JB R5G | Taiwan Semiconductor Corporation | DIODE GEN PURP 600V 5A DO214AA | - | 541613 | Detalles |
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S5JBHM4G | Taiwan Semiconductor Corporation | DIODE GEN PURP 600V 5A DO214AA | - | 564644 | Detalles |
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S5JBHR5G | Taiwan Semiconductor Corporation | DIODE GEN PURP 600V 5A DO214AA | - | 508180 | Detalles |